Abstract
The present invention relates to a method for producing boron nitride nanostructures, the method comprising subjecting boron nitride precursor material to lamp ablation within an adiabatic radiative shielding environment. The nanostructures produced may include nano-onion structures. The boron nitride precursor material subjected to lamp ablation may include amorphous boron nitride, hexagonal boron nitride, cubic boron nitride, wurtzite boron nitride or a combination of two or more thereof.
| Translated title of the contribution | BORON NITRIDE NANOSTRUCTURES |
|---|---|
| Original language | Japanese |
| Patent number | JP 7621579 B2 |
| IPC | C01B21/064 |
| Priority date | 16/11/18 |
| Filing date | 15/11/19 |
| Publication status | Published - 27 Jan 2025 |