氮化硼纳米结构

Translated title of the contribution: Boron nitride nanostructures

Research output: Patent › peer-review

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Abstract

本发明涉及一种生产氮化硼纳米结构的方法，该方法包括在绝热辐射屏蔽环境下使氮化硼前驱体材料经受灯烧蚀。

Translated title of the contribution	Boron nitride nanostructures
Original language	Chinese (Simplified)
Patent number	CN 113631501 B
IPC	C01B21/064,B82Y30/00,B82Y40/00
Priority date	16/11/18
Filing date	15/11/19
Publication status	Published - 13 Sept 2024

Certificate of Grant_CN_ZL201980075790.0 (35560726)Final published version, 1.11 MBLicence: Unspecified

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title = "氮化硼纳米结构",

abstract = "本发明涉及一种生产氮化硼纳米结构的方法，该方法包括在绝热辐射屏蔽环境下使氮化硼前驱体材料经受灯烧蚀。",

author = "Sehrina Eshon and Chua, \{Hui Tong\} and Weike Zhang",

year = "2024",

month = sep,

day = "13",

language = "Chinese (Simplified)",

publisher = "China Intellectual Property Administration",

type = "Patent",

note = "CN 113631501 B; C01B21/064,B82Y30/00,B82Y40/00",

}

TY - PAT

T1 - 氮化硼纳米结构

AU - Eshon, Sehrina

AU - Chua, Hui Tong

AU - Zhang, Weike

PY - 2024/9/13

Y1 - 2024/9/13

N2 - 本发明涉及一种生产氮化硼纳米结构的方法，该方法包括在绝热辐射屏蔽环境下使氮化硼前驱体材料经受灯烧蚀。

AB - 本发明涉及一种生产氮化硼纳米结构的方法，该方法包括在绝热辐射屏蔽环境下使氮化硼前驱体材料经受灯烧蚀。

M3 - Patent

M1 - CN 113631501 B

Y2 - 2019/11/15

PB - China Intellectual Property Administration

ER -