二维三氧化钨纳米结构的合成及其在光电探测器中的应用

Tungsten oxide (WO₃) is ideal for manufacturing transistors and photodetectors. Although some work has been done on growth of WO₃ nanostructures, making ideal long enough nanowires is still a challenge. Among many synthesis methods, the author chose to use chemical vapor deposition (CVD) to synthesize WO₃ nanowires and study their application to photoelectric sensors. The main factors affecting WO₃ nanowires products are precursor material temperature, substrate position, carrier gas flow rate and growth duration time. The greatest length of nanowires grown under appropriate growth condition is approximately 100 μm. WO₃ nanowires can be used for fabricating high-performance photodetectors. WO₃ photodetector has excellent device performance including high sensitivity, fast response speed and module miniaturization, which indicate that two-dimensional WO₃ nanowires have great advantages in the manufacture of photodetectors.