A fundamental study of electronic transport in advanced semiconductor nanostructures

Status	Finished
Effective start/end date	1/07/11 → 30/06/15

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Inversion layer electron mobility distribution in fully-depleted silicon-on-insulator MOSFETs
Umana-Membreno, G. A., Akhavan, N. D., Antoszewski, J., Faraone, L. & Cristoloveanu, S., Sept 2021, In: Solid-State Electronics. 183, 108074.
Research output: Contribution to journal › Article › peer-review
3 Citations (Scopus)
Hall-effect characterization of electron transport at SiO2/4H-SiC MOS interfaces
Umana Membreno, G. A., Dhar, S., Choudhary, A., Ryu, S. H., Antoszewski, J. & Faraone, L., 1 Nov 2015, In: Microelectronic Engineering. 147, p. 137-140 4 p.
Research output: Contribution to journal › Article › peer-review

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6 Citations (Scopus)

238 Downloads (Pure)