No photo of Nima Dehdashtiakhavan
  • The University of Western Australia (M018), 35 Stirling Highway,

    6009 Perth

    Australia

  • 4086 Citations
  • 21 h-Index
20072022
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Research Output 2007 2019

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Article
2019
Superlattices
superlattices
absorbers
Imaging techniques
Wavelength
2018
1 Citation (Scopus)

Delta Doping in HgCdTe-Based Unipolar Barrier Photodetectors

Akhavan, N. D., Umana-Membreno, G. A., Gu, R., Antoszewski, J., Faraone, L. & Fellow, H., Oct 2018, In : IEEE Transactions on Electron Devices. 65, 10, p. 4340-4345 8435934.

Research output: Contribution to journalArticle

Photodetectors
Valence bands
Doping (additives)
Detectors
Cadmium telluride
6 Citations (Scopus)
Photodetectors
Green's function
Dark currents
Infrared radiation
Detectors
2017
1 Citation (Scopus)
41 Downloads (Pure)

Electronic transport parameters of indium zinc oxide thin films after Al2O3/HfO2 top-dielectric formation annealing

Umana-Membreno, G., Song, Y., Akhavan, N. D., Antoszewski, J., Paine, D. C., Zaslavsky, A. & Faraone, L., 25 Jun 2017, In : Microelectronic Engineering. 178, p. 164-167 4 p.

Research output: Contribution to journalArticle

Open Access
File
Zinc Oxide
Indium
Zinc oxide
zinc oxides
indium oxides
6 Citations (Scopus)
Field effect transistors
Doping (additives)
Silicon
Nanowires
Transistors
2016

Hole Transport in Arsenic-Doped Hg1-xCd xTe with x = 0.5

Umana-Membreno, G. A. A., Kala, H., Bains, S., Akhavan, N. D., Antoszewski, J., Maxey, C. D. & Faraone, L., 2016, In : Journal of Electronic Materials. 45, 9, p. 4686-4691 6 p.

Research output: Contribution to journalArticle

Hole mobility
Arsenic
arsenic
hole mobility
Scattering
19 Citations (Scopus)
159 Downloads (Pure)

Mercury(II) selective sensors based on AlGaN/GaN transistors

Asadniaye, M., Myers, M., Akhavan, N. D., O'Donnell, K., Umana-Membreno, G. A., Mishra, U. K., Nener, B., Baker, M. & Parish, G., 2 Nov 2016, In : Analytica Chimica Acta. 943, p. 1-7 7 p.

Research output: Contribution to journalArticle

Open Access
File
Mercury
Transistors
Ions
Limit of Detection
sensor
8 Citations (Scopus)
120 Downloads (Pure)
Open Access
File
Photodetectors
Valence bands
Energy gap
Infrared radiation
Detectors
2015
20 Citations (Scopus)
Valence bands
Detectors
Infrared radiation
Cadmium telluride
Infrared detectors
29 Citations (Scopus)

Engineering the Bandgap of Unipolar HgCdTe-Based nBn Infrared Photodetectors

Kopytko, M., Wróbel, J., Jóźwikowski, K., Rogalski, A., Antoszewski, J., Akhavan, N., Umana-Membreno, G. A., Faraone, L. & Becker, C. R., Jan 2015, In : Journal of Electronic Materials. 44, 1, p. 158-166 9 p.

Research output: Contribution to journalArticle

Open Access
Photodetectors
photometers
Energy gap
Doping (additives)
engineering
5 Citations (Scopus)

Heavy and light hole transport in nominally undoped GaSb substrates

Kala, H., Umana Membreno, G. A., Jolley, G., Dehdashtiakhavan, N., Patrashin, M. A., Akahane, K., Antoszewski, J. & Faraone, L., 21 Jan 2015, In : Applied Physics Letters. 106, p. 1-5 5 p., 032103.

Research output: Contribution to journalArticle

hole mobility
mass ratios
spectrum analysis
Hall effect
superlattices
11 Citations (Scopus)
249 Downloads (Pure)
Open Access
File
Infrared radiation
Detectors
detectors
Temperature
temperature
2014
23 Citations (Scopus)
discontinuity
valence
detectors
modulation doping
barrier layers
3 Citations (Scopus)
Silicon
Nanowires
Transistors
Threshold voltage
Doping (additives)
2 Citations (Scopus)

Intrinsic broadening of the mobility spectrum of bulk n-type GaAs

Jolley, G., Umana-Membreno, G. A., Akhavan, N., Antoszewski, J., Faraone, L. & Fischetti, M. V., 14 Nov 2014, In : New Journal of Physics. 16, p. 1-10 113033.

Research output: Contribution to journalArticle

Open Access
electron mobility
conductivity
spectrum analysis
conduction
magnetic fields
13 Citations (Scopus)
Infrared detectors
Energy gap
Detectors
Dark currents
Valence bands
1 Citation (Scopus)
201 Downloads (Pure)
Open Access
File
metal oxide semiconductors
field effect transistors
insulators
thin films
ballistics
2012
39 Citations (Scopus)

Emission and absorption of optical phonons in Multigate Silicon Nanowire MOSFETs

Dehdashtiakhavan, N., Ferain, I., Yu, R., Razavi, P. & Colinge, J. P., 2012, In : Journal of Computational Electronics. 11, p. 249–265

Research output: Contribution to journalArticle

13 Citations (Scopus)

Influence of discrete dopant on quantum transport in silicon nanowire transistors

Akhavan, N. D., Ferain, I., Yu, R., Razavi, P. & Colinge, J-P., Apr 2012, In : Solid-State Electronics. 70, p. 92-100 9 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)
phonons
field effect transistors
ballistics
graphene
simulation
2011
6 Citations (Scopus)

Characterization of a junctionless diode

Yu, R., Ferain, I., Akhavan, N. D., Razavi, P., Duffy, R. & Colinge, J-P., 4 Jul 2011, In : Applied Physics Letters. 99, 1, 3 p., 013502.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements

Nazarov, A. N., Ferain, I., Akhavan, N. D., Razavi, P., Yu, R. & Colinge, J. P., 15 Aug 2011, In : Applied Physics Letters. 99, 7, 3 p., 073502.

Research output: Contribution to journalArticle

35 Citations (Scopus)

Improvement of carrier ballisticity in junctionless nanowire transistors

Akhavan, N. D., Ferain, I., Razavi, P., Yu, R. & Colinge, J-P., 7 Mar 2011, In : Applied Physics Letters. 98, 10, 3 p., 103510.

Research output: Contribution to journalArticle

10 Citations (Scopus)

Influence of Elastic and Inelastic Electron-Phonon Interaction on Quantum Transport in Multigate Silicon Nanowire MOSFETs

Akhavan, N. D., Afzalian, A., Kranti, A., Ferain, I., Lee, C-W., Yan, R., Razavi, P., Yu, R. & Colinge, J-P., Apr 2011, In : IEEE Transactions on Electron Devices. 58, 4, p. 1029-1037 9 p.

Research output: Contribution to journalArticle

26 Citations (Scopus)

Investigation of high-performance sub-50 nm junctionless nanowire transistors

Yan, R., Kranti, A., Ferain, I., Lee, C-W., Yu, R., Dehdashti, N., Razavi, P. & Colinge, J-P., Jul 2011, In : Microelectronics Reliability. 51, 7, p. 1166-1171 6 p.

Research output: Contribution to journalArticle

166 Citations (Scopus)

Junctionless Multiple-Gate Transistors for Analog Applications

Doria, R. T., Pavanello, M. A., Trevisoli, R. D., de Souza, M., Lee, C-W., Ferain, I., Akhavan, N. D., Yan, R., Razavi, P., Yu, R., Kranti, A. & Colinge, J-P., Aug 2011, In : IEEE Transactions on Electron Devices. 58, 8, p. 2511-2519 9 p.

Research output: Contribution to journalArticle

34 Citations (Scopus)

Junctionless Nanowire Transistor: Complementary Metal-Oxide-Semiconductor Without Junctions

Colinge, J-P., Ferain, I., Kranti, A., Lee, C-W., Akhavan, N. D., Razavi, P., Yan, R. & Yu, R., Jun 2011, In : Science of Advanced Materials. 3, 3, p. 477-482 6 p.

Research output: Contribution to journalArticle

199 Citations (Scopus)

Junctionless Nanowire Transistor (JNT): Properties and design guidelines

Colinge, J. P., Kranti, A., Yan, R., Lee, C. W., Ferain, I., Yu, R., Akhavan, N. D. & Razavi, P., 2011, In : Solid-State Electronics. 65-66, p. 33-37 5 p.

Research output: Contribution to journalArticle

8 Citations (Scopus)

Nanowire to Single-Electron Transistor Transition in Trigate SOI MOSFETs

Akhavan, N. D., Afzalian, A., Lee, C-W., Yan, R., Ferain, I., Razavi, P., Yu, R., Fagas, G. & Colinge, J-P., Jan 2011, In : IEEE Transactions on Electron Devices. 58, 1, p. 26-32 7 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

Quantum Confinement Effects in Capacitance Behavior of Multigate Silicon Nanowire MOSFETs

Afzalian, A., Lee, C-W., Akhavan, N. D., Yan, R., Ferain, I. & Colinge, J-P., Mar 2011, In : IEEE Transactions on Nanotechnology. 10, 2, p. 300-309 10 p.

Research output: Contribution to journalArticle

29 Citations (Scopus)

Random telegraph-signal noise in junctionless transistors

Nazarov, A. N., Ferain, I., Akhavan, N. D., Razavi, P., Yu, R. & Colinge, J. P., 28 Feb 2011, In : Applied Physics Letters. 98, 9, 3 p., 092111.

Research output: Contribution to journalArticle

2010
21 Citations (Scopus)

Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors

Akhavan, N. D., Afzalian, A., Lee, C-W., Yan, R., Ferain, I., Razavi, P., Yu, R., Fagas, G. & Colinge, J-P., 1 Aug 2010, In : Journal of Applied Physics. 108, 3, 8 p., 034510.

Research output: Contribution to journalArticle

268 Citations (Scopus)

High-Temperature Performance of Silicon Junctionless MOSFETs

Lee, C-W., Borne, A., Ferain, I., Afzalian, A., Yan, R., Akhavan, N. D., Razavi, P. & Colinge, J-P., Mar 2010, In : IEEE Transactions on Electron Devices. 57, 3, p. 620-625 6 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Influence of gate misalignment on the electrical characteristics of MuGFETS

Lee, C-W., Afzalian, A., Ferain, I., Yan, R., Akhavan, N. D., Xiong, W. & Colinge, J-P., Mar 2010, In : Solid-State Electronics. 54, 3, p. 226-230 5 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

LDD and Back-Gate Engineering for Fully Depleted Planar SOI Transistors with Thin Buried Oxide

Yan, R., Duane, R., Razavi, P., Afzalian, A., Ferain, I., Lee, C-W., Akhavan, N. D., Nguyen, B-Y., Bourdelle, K. K. & Colinge, J-P., Jun 2010, In : IEEE Transactions on Electron Devices. 57, 6, p. 1319-1326 8 p.

Research output: Contribution to journalArticle

165 Citations (Scopus)

Low subthreshold slope in junctionless multigate transistors

Lee, C-W., Nazarov, A. N., Ferain, I., Akhavan, N. D., Yan, R., Razavi, P., Yu, R., Doria, R. T. & Colinge, J-P., 8 Mar 2010, In : Applied Physics Letters. 96, 10, 3 p., 102106.

Research output: Contribution to journalArticle

33 Citations (Scopus)

Mobility improvement in nanowire junctionless transistors by uniaxial strain

Raskin, J-P., Colinge, J-P., Ferain, I., Kranti, A., Lee, C-W., Akhavan, N. D., Yan, R., Razavi, P. & Yu, R., 26 Jul 2010, In : Applied Physics Letters. 97, 4, 3 p., 042114.

Research output: Contribution to journalArticle

1337 Citations (Scopus)

Nanowire transistors without junctions

Colinge, J-P., Lee, C-W., Afzalian, A., Akhavan, N. D., Yan, R., Ferain, I., Razavi, P., O'Neill, B., Blake, A., White, M., Kelleher, A-M., McCarthy, B. & Murphy, R., Mar 2010, In : Nature Nanotechnology. 5, 3, p. 225-229 5 p.

Research output: Contribution to journalArticle

352 Citations (Scopus)

Performance estimation of junctionless multigate transistors

Lee, C-W., Ferain, I., Afzalian, A., Yan, R., Akhavan, N. D., Razavi, P. & Colinge, J-P., Feb 2010, In : Solid-State Electronics. 54, 2, p. 97-103 7 p.

Research output: Contribution to journalArticle

208 Citations (Scopus)

Reduced electric field in junctionless transistors

Colinge, J-P., Lee, C-W., Ferain, I., Akhavan, N. D., Yan, R., Razavi, P., Yu, R., Nazarov, A. N. & Doriac, R. T., 15 Feb 2010, In : Applied Physics Letters. 96, 7, 3 p., 073510.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Simulation of Quantum Current Oscillations in Trigate SOI MOSFETs

Akhavan, N. D., Afzalian, A., Lee, C-W., Yan, R., Ferain, I., Razavi, P., Fagas, G. & Colinge, J-P., May 2010, In : IEEE Transactions on Electron Devices. 57, 5, p. 1102-1109 8 p.

Research output: Contribution to journalArticle

2009
5 Citations (Scopus)

Analytical model for the high-temperature behaviour of the subthreshold slope in MuGFETs

Lee, C-W., Lederer, D., Afzalian, A., Yan, R., Akhavan, N. D. & Colinge, J-P., Oct 2009, In : Microelectronic Engineering. 86, 10, p. 2067-2071 5 p.

Research output: Contribution to journalArticle

30 Citations (Scopus)

A new F(ast)-CMS NEGF algorithm for efficient 3D simulations of switching characteristics enhancement in constricted tunnel barrier silicon nanowire MuGFETs

Afzalian, A., Akhavan, N. D., Lee, C-W., Yan, R., Ferain, I., Razavi, P. & Colinge, J-P., Oct 2009, In : Journal of Computational Electronics. 8, 3-4, p. 287-306 20 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Comparison of different surface orientation in narrow fin MuGFETs

Lee, C-W., Afzalian, A., Ferain, I., Yan, R., Dehdashti, N., Byun, K-Y., Colinge, C., Xiong, W. & Colinge, J-P., Dec 2009, In : Microelectronic Engineering. 86, 12, p. 2381-2384 4 p.

Research output: Contribution to journalArticle

593 Citations (Scopus)

Junctionless multigate field-effect transistor

Lee, C-W., Afzalian, A., Akhavan, N. D., Yan, R., Ferain, I. & Colinge, J-P., 2 Feb 2009, In : Applied Physics Letters. 94, 5, 2 p., 053511.

Research output: Contribution to journalArticle

8 Citations (Scopus)

NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs

Lee, C-W., Ferain, I., Afzalian, A., Yan, R., Dehdashti, N., Razavi, P., Colinge, J-P. & Park, J. T., 2009, In : Microelectronics Reliability. 49, 9-11, p. 1044-1047 4 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

Properties of Accumulation-Mode Multi-Gate Field-Effect Transistors

Colinge, J-P., Lederer, D., Afzalian, A., Yan, R., Lee, C-W., Akhavan, N. D. & Xiong, W., Mar 2009, In : Japanese Journal of Applied Physics. 48, 3, 7 p., 034502.

Research output: Contribution to journalArticle

2008
16 Citations (Scopus)

Comparison of contact resistance between accumulation-mode and inversion-mode multigate FETs

Lee, C-W., Lederer, D., Afzalian, A., Yan, R., Dehdashti, N., Xiong, W. & Colinge, J-P., Nov 2008, In : Solid-State Electronics. 52, 11, p. 1815-1820 6 p.

Research output: Contribution to journalArticle

15 Citations (Scopus)

Drain Breakdown Voltage in MuGFETs: Influence of Physical Parameters

Lee, C-W., Afzalian, A., Yan, R., Akhavan, N. D., Xiong, W. & Colinge, J-P., Dec 2008, In : IEEE Transactions on Electron Devices. 55, 12, p. 3503-3506 4 p.

Research output: Contribution to journalArticle