No photo of Nima Dehdashtiakhavan
  • The University of Western Australia (M018), 35 Stirling Highway,

    6009 Perth

    Australia

  • 4086 Citations
  • 21 h-Index
20072022
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Research Output 2007 2019

2019
Superlattices
superlattices
absorbers
Imaging techniques
Wavelength

Recent advances in IR imaging focal plane arrays technology at UWA

Gu, R., Kala, H., Antoszewski, J., Umana-Membreno, G., Dehdashtiakhavan, N., Madni, I. & Faraone, L., 14 May 2019, 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018. IEEE, Institute of Electrical and Electronics Engineers, p. 11-12 2 p. 8715245. (Conference on Optoelectronic and Microelectronic Materials and Devices).

Research output: Chapter in Book/Conference paperConference paper

Focal plane arrays
Infrared imaging
focal plane devices
Infrared detectors
infrared detectors
1 Citation (Scopus)

Delta Doping in HgCdTe-Based Unipolar Barrier Photodetectors

Akhavan, N. D., Umana-Membreno, G. A., Gu, R., Antoszewski, J., Faraone, L. & Fellow, H., Oct 2018, In : IEEE Transactions on Electron Devices. 65, 10, p. 4340-4345 8435934.

Research output: Contribution to journalArticle

Photodetectors
Valence bands
Doping (additives)
Detectors
Cadmium telluride
6 Citations (Scopus)
Photodetectors
Green's function
Dark currents
Infrared radiation
Detectors

Towards a magnetoresistance characterization methodology for 1D nanostructured transistors

Umana-Membreno, G. A., Akhavan, N. D., Antoszewski, J., Faraone, L. & Cristoloveanu, S., 3 May 2018, 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). Gámiz, F., Sverdlov, V., Sampedro, C. & Donetti, L. (eds.). United States: IEEE, Institute of Electrical and Electronics Engineers, p. 125-128 4 p.

Research output: Chapter in Book/Conference paperConference paper

Magnetoresistance
Transistors
Velocity distribution
2017
1 Citation (Scopus)
41 Downloads (Pure)

Electronic transport parameters of indium zinc oxide thin films after Al2O3/HfO2 top-dielectric formation annealing

Umana-Membreno, G., Song, Y., Akhavan, N. D., Antoszewski, J., Paine, D. C., Zaslavsky, A. & Faraone, L., 25 Jun 2017, In : Microelectronic Engineering. 178, p. 164-167 4 p.

Research output: Contribution to journalArticle

Open Access
File
Zinc Oxide
Indium
Zinc oxide
zinc oxides
indium oxides
6 Citations (Scopus)
Field effect transistors
Doping (additives)
Silicon
Nanowires
Transistors

Hole Transport in Arsenic-Doped Hg1-xCd xTe with x = 0.5

Umana-Membreno, G. A. A., Kala, H., Bains, S., Akhavan, N. D., Antoszewski, J., Maxey, C. D. & Faraone, L., 2016, In : Journal of Electronic Materials. 45, 9, p. 4686-4691 6 p.

Research output: Contribution to journalArticle

Hole mobility
Arsenic
arsenic
hole mobility
Scattering
19 Citations (Scopus)
157 Downloads (Pure)

Mercury(II) selective sensors based on AlGaN/GaN transistors

Asadniaye, M., Myers, M., Akhavan, N. D., O'Donnell, K., Umana-Membreno, G. A., Mishra, U. K., Nener, B., Baker, M. & Parish, G., 2 Nov 2016, In : Analytica Chimica Acta. 943, p. 1-7 7 p.

Research output: Contribution to journalArticle

Open Access
File
Mercury
Transistors
Ions
Limit of Detection
sensor

Self consistent carrier transport in band engineered HgCdTe nBn detector

Akhavan, N. D., Umana-Membreno, G. A., Antoszweski, J. & Faraone, L., 2016, 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016. Piprek, J., Poulton, C., Steel, M. & de Sterke, M. (eds.). IEEE, Institute of Electrical and Electronics Engineers, p. 119-120 2 p.

Research output: Chapter in Book/Conference paperConference paper

dark current
detectors
nonequilibrium conditions
barrier layers
absorbers
8 Citations (Scopus)
120 Downloads (Pure)
Open Access
File
Photodetectors
Valence bands
Energy gap
Infrared radiation
Detectors
2015
20 Citations (Scopus)
Valence bands
Detectors
Infrared radiation
Cadmium telluride
Infrared detectors
29 Citations (Scopus)

Engineering the Bandgap of Unipolar HgCdTe-Based nBn Infrared Photodetectors

Kopytko, M., Wróbel, J., Jóźwikowski, K., Rogalski, A., Antoszewski, J., Akhavan, N., Umana-Membreno, G. A., Faraone, L. & Becker, C. R., Jan 2015, In : Journal of Electronic Materials. 44, 1, p. 158-166 9 p.

Research output: Contribution to journalArticle

Open Access
Photodetectors
photometers
Energy gap
Doping (additives)
engineering
5 Citations (Scopus)

Heavy and light hole transport in nominally undoped GaSb substrates

Kala, H., Umana Membreno, G. A., Jolley, G., Dehdashtiakhavan, N., Patrashin, M. A., Akahane, K., Antoszewski, J. & Faraone, L., 21 Jan 2015, In : Applied Physics Letters. 106, p. 1-5 5 p., 032103.

Research output: Contribution to journalArticle

hole mobility
mass ratios
spectrum analysis
Hall effect
superlattices
6 Citations (Scopus)

Recent developments in Mercury Cadmium Telluride IR detector technology

Antoszewski, J., Akhavan, N., Umana Membreno, G. A., Gu, R., Lei, W. & Faraone, L., 2015, ECS Transactions. USA: Electrochemical Society, Vol. 69. p. 61-75

Research output: Chapter in Book/Conference paperConference paper

mercury cadmium tellurides
detectors
pixels
infrared detectors
focal plane devices
11 Citations (Scopus)
249 Downloads (Pure)
Open Access
File
Infrared radiation
Detectors
detectors
Temperature
temperature
2014
23 Citations (Scopus)
discontinuity
valence
detectors
modulation doping
barrier layers

Atomistic Modelling of p-channel Junctionless Silicon Nanowire Transistor: k.p approach

Akhavan, N., Jolley, G., Umana Membreno, G. A., Antoszewski, J. & Faraone, L., 2014, Proceedings of the 2014 International Conference on Nanoscience and Nanotechnology (ICONN). United States of America: IEEE, Institute of Electrical and Electronics Engineers, Vol. 1 . p. 17-20

Research output: Chapter in Book/Conference paperConference paper

nanowires
transistors
field effect transistors
silicon
coupled modes

Band-to-Band Tunnelling (BTBT) in HgCdTe-based nBn detectors for LWIR applications

Akhavan, N., Jolley, G., Umana-Membreno, G. A., Antoszewski, J. & Faraone, L., 2014, COMMAD 2014 Conference Proceedings. United States of America: IEEE, Institute of Electrical and Electronics Engineers, Vol. 1. p. 223-225

Research output: Chapter in Book/Conference paperConference paper

3 Citations (Scopus)
Silicon
Nanowires
Transistors
Threshold voltage
Doping (additives)
nanowires
transistors
Green's functions
formalism
silicon

Intrinsic broadening of the mobility spectrum of bulk n-type GaAs

Jolley, G., Umana-Membreno, G. A., Akhavan, N., Antoszewski, J. & Faraone, L., 2014, COMMAD 2014 Conference Proceedings. United States of America: IEEE, Institute of Electrical and Electronics Engineers, Vol. N/A. p. 105-108

Research output: Chapter in Book/Conference paperConference paper

2 Citations (Scopus)

Intrinsic broadening of the mobility spectrum of bulk n-type GaAs

Jolley, G., Umana-Membreno, G. A., Akhavan, N., Antoszewski, J., Faraone, L. & Fischetti, M. V., 14 Nov 2014, In : New Journal of Physics. 16, p. 1-10 113033.

Research output: Contribution to journalArticle

Open Access
electron mobility
conductivity
spectrum analysis
conduction
magnetic fields
13 Citations (Scopus)
Infrared detectors
Energy gap
Detectors
Dark currents
Valence bands
1 Citation (Scopus)
201 Downloads (Pure)
Open Access
File
metal oxide semiconductors
field effect transistors
insulators
thin films
ballistics
2013
dark current
absorbers
detectors
valence
mercury cadmium tellurides

Impurity scattering in p-type silicon nanowire FET: k.p approach

Dehdashtiakhavan, N., Jolley, G., Umana-Membreno, G. A., Antoszewski, J. & Faraone, L., 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2013). United States of America: IEEE, Institute of Electrical and Electronics Engineers, Vol. 1. p. 240-243

Research output: Chapter in Book/Conference paperConference paper

2012
39 Citations (Scopus)

Emission and absorption of optical phonons in Multigate Silicon Nanowire MOSFETs

Dehdashtiakhavan, N., Ferain, I., Yu, R., Razavi, P. & Colinge, J. P., 2012, In : Journal of Computational Electronics. 11, p. 249–265

Research output: Contribution to journalArticle

13 Citations (Scopus)

Influence of discrete dopant on quantum transport in silicon nanowire transistors

Akhavan, N. D., Ferain, I., Yu, R., Razavi, P. & Colinge, J-P., Apr 2012, In : Solid-State Electronics. 70, p. 92-100 9 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)
phonons
field effect transistors
ballistics
graphene
simulation
4 Citations (Scopus)

Study of uniformly doped graphene nanoribbon transistor (GNR) FET using quantum simulation

Dehdashtiakhavan, N., Jolley, G., Umana Membreno, G. A., Antoszewski, J. & Faraone, L., 2012, COMMAD 2012 PROCEEDINGS. United States: IEEE, Institute of Electrical and Electronics Engineers, Vol. 1. p. 67-68

Research output: Chapter in Book/Conference paperConference paper

2011
16 Citations (Scopus)

A Simulation Comparison between Junctionless and Inversion-Mode MuGFETs

Colinge, J. P., Kranti, A., Yan, R., Ferain, I., Akhavan, N. D., Razavi, P., Lee, C. W., Yu, R. & Colinge, C. A., 2011, ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15. Omura, Y., Ishii, H., Nguyen, BY., Selberherr, S., Gamiz, F., Martino, JA. & Raskin, JP. (eds.). Electrochemical Society, Inc., p. 63-72 10 p. (ECS Transactions; vol. 35).

Research output: Chapter in Book/Conference paperConference paper

6 Citations (Scopus)

Characterization of a junctionless diode

Yu, R., Ferain, I., Akhavan, N. D., Razavi, P., Duffy, R. & Colinge, J-P., 4 Jul 2011, In : Applied Physics Letters. 99, 1, 3 p., 013502.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Comparative Study of Random Telegraph Noise in Junctionless and Inversion-Mode MuGFETs

Nazarov, A. N., Lee, C. W., Kranti, A., Ferain, I., Yan, R., Akhavan, N. D., Razavi, P., Yu, R. & Colinge, J. P., 2011, ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15. Omura, Y., Ishii, H., Nguyen, BY., Selberherr, S., Gamiz, F., Martino, JA. & Raskin, JP. (eds.). ELECTROCHEMICAL SOC INC, p. 73-78 6 p. (ECS Transactions; vol. 35).

Research output: Chapter in Book/Conference paperConference paper

4 Citations (Scopus)

Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements

Nazarov, A. N., Ferain, I., Akhavan, N. D., Razavi, P., Yu, R. & Colinge, J. P., 15 Aug 2011, In : Applied Physics Letters. 99, 7, 3 p., 073502.

Research output: Contribution to journalArticle

35 Citations (Scopus)

Improvement of carrier ballisticity in junctionless nanowire transistors

Akhavan, N. D., Ferain, I., Razavi, P., Yu, R. & Colinge, J-P., 7 Mar 2011, In : Applied Physics Letters. 98, 10, 3 p., 103510.

Research output: Contribution to journalArticle

10 Citations (Scopus)

Influence of Elastic and Inelastic Electron-Phonon Interaction on Quantum Transport in Multigate Silicon Nanowire MOSFETs

Akhavan, N. D., Afzalian, A., Kranti, A., Ferain, I., Lee, C-W., Yan, R., Razavi, P., Yu, R. & Colinge, J-P., Apr 2011, In : IEEE Transactions on Electron Devices. 58, 4, p. 1029-1037 9 p.

Research output: Contribution to journalArticle

26 Citations (Scopus)

Investigation of high-performance sub-50 nm junctionless nanowire transistors

Yan, R., Kranti, A., Ferain, I., Lee, C-W., Yu, R., Dehdashti, N., Razavi, P. & Colinge, J-P., Jul 2011, In : Microelectronics Reliability. 51, 7, p. 1166-1171 6 p.

Research output: Contribution to journalArticle

166 Citations (Scopus)

Junctionless Multiple-Gate Transistors for Analog Applications

Doria, R. T., Pavanello, M. A., Trevisoli, R. D., de Souza, M., Lee, C-W., Ferain, I., Akhavan, N. D., Yan, R., Razavi, P., Yu, R., Kranti, A. & Colinge, J-P., Aug 2011, In : IEEE Transactions on Electron Devices. 58, 8, p. 2511-2519 9 p.

Research output: Contribution to journalArticle

34 Citations (Scopus)

Junctionless Nanowire Transistor: Complementary Metal-Oxide-Semiconductor Without Junctions

Colinge, J-P., Ferain, I., Kranti, A., Lee, C-W., Akhavan, N. D., Razavi, P., Yan, R. & Yu, R., Jun 2011, In : Science of Advanced Materials. 3, 3, p. 477-482 6 p.

Research output: Contribution to journalArticle

199 Citations (Scopus)

Junctionless Nanowire Transistor (JNT): Properties and design guidelines

Colinge, J. P., Kranti, A., Yan, R., Lee, C. W., Ferain, I., Yu, R., Akhavan, N. D. & Razavi, P., 2011, In : Solid-State Electronics. 65-66, p. 33-37 5 p.

Research output: Contribution to journalArticle

Junctionless Transistors: Physics and Properties

Colinge, J. P., Lee, C. W., Akhavan, N. D., Yan, R., Ferain, I., Razavi, P., Kranti, A. & Yu, R., 2011, SEMICONDUCTOR-ON-INSULATOR MATERIALS FOR NANOELECTRONICS APPLICATIONS. Nazarov, A., Colinge, JP., Balestra, F., Raskin, JP., Gamiz, F. & Lysenko, VS. (eds.). Springer-Verlag London Ltd., p. 187-200 14 p. (Engineering Materials).

Research output: Chapter in Book/Conference paperChapter

8 Citations (Scopus)

Nanowire to Single-Electron Transistor Transition in Trigate SOI MOSFETs

Akhavan, N. D., Afzalian, A., Lee, C-W., Yan, R., Ferain, I., Razavi, P., Yu, R., Fagas, G. & Colinge, J-P., Jan 2011, In : IEEE Transactions on Electron Devices. 58, 1, p. 26-32 7 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

Quantum Confinement Effects in Capacitance Behavior of Multigate Silicon Nanowire MOSFETs

Afzalian, A., Lee, C-W., Akhavan, N. D., Yan, R., Ferain, I. & Colinge, J-P., Mar 2011, In : IEEE Transactions on Nanotechnology. 10, 2, p. 300-309 10 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

Random Dopant Variation in Junctionless nanowire Transistors

Akhavan, N. D., Ferain, I., Razavi, P., Yu, R. & Colinge, J-P., 2011, 2011 IEEE INTERNATIONAL SOI CONFERENCE. Wiley-IEEE Press, 2 p. (IEEE International SOI Conference).

Research output: Chapter in Book/Conference paperConference paper