Material Science
Porous Silicon
100%
Surface (Surface Science)
71%
Transistor
63%
Film
56%
Electron Mobility
54%
Heterojunction
48%
Field Effect Transistors
44%
Gallium Nitride
40%
Density
40%
Silicon
31%
Carrier Transport
28%
Thin Films
27%
Molecular Beam Epitaxy
23%
Magnetoresistance
19%
Nitride Compound
19%
Indium
19%
Sapphire
15%
Aluminum
15%
Microelectromechanical System
14%
Metal-Organic Chemical Vapor Deposition
14%
Deep-Level Transient Spectroscopy
13%
Annealing
12%
Anodizing
12%
Schottky Barrier
11%
Aluminum Nitride
11%
Surface Charge
11%
Thermal Conductivity
10%
Activation Energy
10%
Oxide Compound
10%
Carrier Concentration
9%
Current Voltage Characteristics
9%
Surface Active Agent
9%
Micromachining
9%
Contact Resistance
9%
Chemical Vapor Deposition
9%
Reactive Ion Etching
9%
Electron Transfer
8%
Capacitance
7%
Device Fabrication
7%
Oxidation Reaction
7%
Silicon Nitride
7%
Schottky Diode
7%
Diffusivity
6%
Hall Mobility
6%
Electrical Resistivity
6%
Surface Property
5%
Engineering
Porous Silicon
95%
Nitride
50%
Field-Effect Transistor
44%
Porosity
33%
Heterojunctions
30%
Thin Films
26%
Heterostructures
18%
Output Power
18%
Band Gap
17%
Power Amplifier
16%
Chemical Sensor
16%
Sapphire Substrate
16%
Ohmic Contacts
15%
Two Dimensional
15%
Detection Limit
14%
Sensing Application
14%
Photodiode
14%
Low-Temperature
14%
Passivation
12%
Cap Layer
11%
Electric Field
11%
Micro Machining
11%
Current-Voltage Characteristic
11%
Temperature Coefficient
10%
Responsivity
10%
Gate Length
10%
Sensor Response
10%
Linear Response
9%
Engineering
9%
Photodetection
9%
Device Structure
9%
Growth Condition
9%
Drain Spacing
9%
Ph Dependent
9%
High Dielectric Constant
9%
Metal Gate
9%
Dielectrics
9%
Microelectromechanical System
9%
Thermal Sensor
8%
Chip Bonding
8%
Barrier Height
8%
Induced Defect
8%
Breakdown Voltage
8%
Metal Organic Chemical Vapor Deposition
7%
Thermal Conductivity
7%
Silicon Substrate
7%
Interlayer
7%
Surface Oxide
7%
Silicon Dioxide
7%
Carrier Concentration
7%